Bs170 mosfet

N−Channel TO−(TO−226). Commandez BS1maintenant ! N− Channel TO−(TO−226). Non−repetitive (tp ≤ μs). Part Number V(BR)DSS Min (V) rDS(on) Max (Ω).

N-Channel 60-V ( D-S) MOSFET. BS1- Transistor N- MOSFET boîtier TO92: Amazon. This very high density process has been designed to minimize on-state resistance while provide rugge reliable and fast switching performance. These products have been designed to minimize on- state resistance while provide rugge reliable, and fast switching performance. Small Signal MOSFET - BS170.

Note - this is a fragile component! Use caution not to overheat or break leads.

It has a very low gate threshold voltage around 2. V and can drive up to 500mA continuously. The can be used in most applications requiring up to. Typically curve traces for MOSFETs are measured with Vg at set of useful, fixed values between the Gate-Source Threshold Voltage, Vgs(th), and Gate Source Voltage, Vgs.

Electronic components for building analogue synthesisers. The value of Vds is then swept between and some useful value at or below about of the Drain-Source breakdown Voltage, . Although they are most often used in high-power circuits and digital logic integrated circuits, MOSFETs may also be used in general-purpose, small-signal amplifier applications. The BS1is an example of a commonly available N- channel, enhancement-mode MOSFET that can be used in a variety of applications.

BS1Transistor Datasheet, BS1Equivalent, PDF Data Sheets. Parameters and Characteristics. Les marques déposées et les raisons sociales sont la propriété de leurs détenteurs respectifs, et sont uniquement utilisées dans le but de démontrer la compatibilité entre nos articles et les articles des fabricants. Buy Transistor BS1TO-Transistor N Channel MOSFET Volt. Trois tailles et puissances de MOSFET à canal N. SUM110N-en boîtier TO2(100V, 110A, 10mOhm à 10Vgs).

Au milieu : BS1en boîtier TO(60V, 5A, Ohm).

On trouve des MOSFET plus gros et plus puissants, capables de supporter des . R drain-source on-resistance, 500mA drain current, 20V gate source voltage, 10ns turn-on time, 10ns turn-off time, 830mW power, TO-case, they can be used in most applications requiring up to 500mA dc, these products . Add to Wish List Add to Compare. Livraison rapide et Economies garanties en kit sécurité électro !