Tip36c

Designed for general−purpose power amplifier and switching applications. The Bipolar Power Transistor is designed for general purpose power amplifier and switching applications. Il est fabriqué en technologie planaire avec un layout île de base. Le transistor présente des performances exceptionnelles à gain élevé couplé à une très faible tension de saturation. Complementary power transistors.

The devices are manufactured in planar technology with “base island” layout.

The resulting transistors show . It is manufactured in planar technology with base island layout. Specifications are subject to change without notice. TIP3 TIP36A, TIP36B, TIP36C.

W at 25°C Case Temperature. It is intented for use in power amplifier and switching applications. INTERNAL SCHEMATIC DIAGRAM. PNP SILICON POWER TRANSISTORS.

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These parameters must be measured using voltage-sensing contacts, . Vérifiez notre large offre. Browse our latest bipolar-transistors offers. Low collector- emitter saturation voltage.

TIPTIP35A TIP35B TIP35C. MAXIMUM RATINGS: (TC=25°C). Collector-Emitter Voltage. Have a question about placing your order? On my JP, the fuse Fon the PPB keeps blowing.

Will replacing the transistor keep the fuse from blowing? Or is the transistor behind the fuse in the electrical path, which would mean something else. Parameters and Characteristics.

Designedfor general−purpose power amplifier and switching applications.